Technical Innovation
Adhere to the founding principles with craftsmanship, Unigrace people empower high-quality development with technological innovation.
Unigrace boasts the world's advanced automated, digital, and visualized intelligent equipment, including fully-automatic single crystal furnaces from JSG, Kayex, Songci and TDG and well-known diamond wire slicers from Gaoce and Linton, which can intelligently feed, sort, clean and detect, realize standardized operation, greatly improve production efficiency, and build an advanced production and management workshop for digital crystallized silicon materials.
Unigrace has a superior quality control system, and has passed many authoritative certifications such as GB/T19001-2016/ISO 9001:2015 quality management system certification, environmental system and occupational health.
Long service life • Large size • Thin wafer
Development of monocrystalline silicon
Yuze is a professional manufacturer of N-type photovoltaic monocrystalline silicon rods and wafers, technically focusing on the development of long life, low oxygen, large size and thin N-type monocrystalline silicon wafers.
G12 • 10ppm • 8ppm
36"/40" N-type thermal field
In the crystal pulling process, the unit yield of G12 silicon rod with 36-inch thermal field can reach more than 200kg, and the interstitial oxygen content can reach below 10ppm. 40-inch N-type thermal field and ultra-low oxygen products below 8ppm have also been developed.
110μm • Ultra thin 50μm
Full line product supply capacity
With the non-destructive cutting techniques, it has also achieved the mass production of 110-micron 210 "small golden bricks", and removed the technical bottleneck of 50-micron slicing.
* Through the gettering process at the end of the silicon wafer, the lifetime consistency of minority carriers in the silicon wafer is improved.
* Unigrace has made it a reality that as far as the same size is concerned, the cost of N-type silicon wafer is lower than that of P-type, with lower cost per watt and less carbon emission.
Resistivity Concentration Doping Technology
Through a precisely engineered P and Sb dual-element doping system, wafers achieve high resistivity uniformity, improving the efficiency of downstream cell production lines. Current wafer products have achieved ≥90% resistivity concentration within the 1.1-1.4Ω·cm range, with further improvements ongoing, helping enhance the potential value of customers' products.
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