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N-type Mono Wafer--备份

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Product details

Personalized customization according to customer needs; Long service life, suitable for products with high efficiency; Ultra-thin silicon chip, the lowest can be 90-110μm; Phosphorus doping, ultra-low attenuation process 

 

PERFORMANCE PARAMETER

Item

Inpection Criteria

Resistivity/Ω.cm

0.4~1.6

1.0~7.02.0~14.0

Minority carrier
lifetime/μs

≥1000≥1000≥3000

Oxygen concentration
/atoms/cm³

≤7.0×1017
≤6.0×1017

Carbon concentration
/atoms/cm³

≤5.0×10¹⁶

 

GEOMETRIC DIMENSIONS

Item

Inpection Criterie

Geomery

Quasi-square

RectangularRectangular(half brick)
Wafer modelM6M10M11-LG10 half waferG12 half wafer
Wafer side
length/mm
166±0.25182.2±0.25A:182.2±0.20
B:191.6±0.25
A:182±0.25
B:91±0.25
A:210±0.25
B:105±0.25
Diameter/mm223±0.25247±0.25262.5±0.25//
Wafer coner
length/mm
8.55±0.57.72±0.51.38±0.51.0±0.51.41±0.5

 

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