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P-type Mono Wafer

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Product details

Mature technical process; Gallium doping, ultra-low attenuation process.

 

PERFORMANCE PARAMETER

Item

Inpection Criteria

Resistivity/Ω.cm0.4~1.1
Minority carrier
lifetime/μs
≥70
Oxygen concentration
/atoms/cm
≤7.5×10¹⁷
Carbon concentration
/atoms/cm³
≤5.0×10¹⁶atoms/cm³

 

GEOMETRIC DIMENSIONS

Item

Inpection Criteria

GeomeryQuasi-square
Wafer modelM10M10-LG12
Wafer side
length/mm
182.2±0.25A:182.2±0.25
B:183.75±0.25
210±0.25
Diameter/mm247±0.25247±0.25295±0.25
Wafer coner
length/mm
7.72±0.58.53±0.51.41±0.5

 

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