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Performance Parameters
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Resistivity/Ω ·cm
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4-28/10-50
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Automatic Wafer Sorting System
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Minority Carrier Lifetime/μs
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≥3000
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Minority Carrier Lifetime Tester (BCT-400)
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Oxygen Concentration/atoms/cm³
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≤6.0×10¹⁷
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Fourier Transform Infrared Spectrometer (FTIR)
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Carbon Concentration/atoms/cm³
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≤5.0×10 16
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Fourier Transform Infrared Spectrometer (FTIR)
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Material Properties
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Growth Method
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Czochralski (CZ) method
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Dopant
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Phosphorus&Antimony(P-Sb)
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Conductivity Type
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N-type
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P/N Type Tester Conductivity Type Tester (P/N Type Tester)
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Crystal Orientation/°
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<100>±3
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X-ray Diffractometer (XRD)
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Dislocation Density/cm²
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≤500/cm²
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X-ray Diffractometer (XRD)
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Dimensional Parameters
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Side length/mm
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183*197.3±0.15
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Diameter/mm
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267±0.25
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Corner length/mm
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1.55*1.44±0.5
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Angle between adjacent sides/°
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90±0.1
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Thickness/μm
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145+10/-10 (batch ≥ 145 μm)
135+10/-10 (batch ≥ 135 μm)
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Surface Quality
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Cutting Method
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Diamond Wire Saw Cutting
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Saw Mark Direction
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Parallel to Short Edge (Half Wafer)
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Visual Inspection
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TTV
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≤20μm
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Automatic Wafer Sorting System
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Saw Marks
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≤13μm
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Automatic Wafer Sorting System
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Bend Bow
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≤40μm
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Automatic Wafer Sorting System
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Warp
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≤40μm
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Automatic Wafer Sorting System
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Chip
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Depth≤0.3mm and length≤0.5mm,Max1/pcs,NoV-shaped chipping allowed
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Manual or Automatic Wafer Sorting System
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Micro-cracks & Pinhole
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Not allowed
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Automatic Wafer Sorting System
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Surface Quality
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Clean surface,no visible contamination(oil,fingerprints,slurry residues,adhesive residues,stains)
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Automatic Wafer Sorting System
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