|
Performance Parameters
|
|
Resistivity/Ω ·cm
|
4-28/10-50
|
|
Automatic Wafer Sorting System
|
|
Minority Carrier Lifetime/μs
|
≥3000
|
|
Minority Carrier Lifetime Tester BCT-400
|
|
Oxygen Concentration/atoms/cm³
|
≤6.0×10¹⁷
|
|
Fourier Transform Infrared Spectrometer (FTIR)
|
|
Carbon Concentration/atoms/cm³
|
≤5.0×10 16
|
|
Fourier Transform Infrared Spectrometer (FTIR)
|
|
Material Properties
|
|
Growth Method
|
Czochralski (CZ) method
|
|
Dopant
|
Phosphorus&Antimony(P-Sb)
|
|
Conductivity Type
|
N-type
|
|
P/N-type Tester Conductivity Type Tester (P/N Type Tester)
|
|
Crystal Orientation/°
|
<100>±3
|
|
X-ray Diffractometer (XRD)
|
|
Dislocation Density/cm²
|
≤500/cm²
|
|
X-ray Diffractometer (XRD)
|
|
Dimensional Parameters
|
|
Side length/mm
|
182.8*212.4±0.15
|
|
Diameter/mm
|
278.5±0.25
|
|
Corner length/mm
|
1.33*1.14±0.5
|
|
Angle between adjacent sides/°
|
90±0.1
|
|
Thickness/μm
|
145+10/-10 (batch ≥ 145 μm)
135+10/-10 (batch ≥ 135 μm)
|
|
Surface Quality
|
|
Cutting Method
|
Diamond Wire Saw Cutting
|
|
Saw Mark Direction
|
Parallel to Short Edge (Half Wafer)
|
|
Visual Inspection
|
|
TTV
|
≤20μm
|
|
Automatic Wafer Sorting System
|
|
Saw Marks
|
≤13μm
|
|
Automatic Wafer Sorting System
|
|
Bow
|
≤40μm
|
|
Automatic Wafer Sorting System
|
|
Warp
|
≤40μm
|
|
Automatic Wafer Sorting System
|
|
Chip
|
Depth≤0.3mm and length≤0.5mm,Max1/pcs,NoV-shaped chipping allowed
|
|
Manual or Automatic Wafer Sorting System
|
|
Micro-cracks & Pinhole
|
Not allowed
|
|
Automatic Wafer Sorting System
|
|
Surface Quality
|
Clean surface,no visible contamination(oil,fingerprints,slurry residues,adhesive residues,stains)
|
|
Automatic Wafer Sorting System
|
